parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 78 i c @ t c = 100c continuous collector current 42 i cm pulsed collector current ? 156 a i lm clamped inductive load current ? 156 i f @ t c = 100c diode continuous forward current 42 i fm diode maximum forward current 156 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 350 p d @ t c = 100c maximum power dissipation 140 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) IRG4PSH71KD insulated gate bipolar transistor with ultrafast soft recovery diode e g n-channel c v ces = 1200v v ce(on) typ. = 2.97v @v ge = 15v, i c = 42a short circuit rated ultrafast igbt 5/11/99 preliminary parameter min. typ. max. units r q jc junction-to-case - igbt CCC CCC 0.36 r q jc junction-to-case - diode CCC CCC 0.69 c/w r q cs case-to-sink, flat, greased surface CCC 0.24 CCC r q ja junction-to-ambient, typical socket mount CCC CCC 38 recommended clip force 20.0(2.0) CCC CCC n (kgf) weight CCC 6 (0.21) CCC g (oz) absolute maximum ratings w thermal resistance\ mechanical pd - 91688a features benefits www.irf.com 1 ? hole-less clip/pressure mount package compatible with to-247 and to-264, with reinforced pins ? high short circuit rating igbts, optimized for motorcontrol ? minimum switching losses combined with low conduction losses ? tightest parameter distribution ? igbt co-packaged with ultrafast soft recovery antiparallel diode ? creepage distance increased to 5.35mm ? highest current rating copack igbt ? maximum power density, twice the power handling of the to-247, less space than to-264 ? hexfred tm diode optimized for operation with igbt, to minimize emi, noise and switching losses super - 247
IRG4PSH71KD 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) 410 610 i c = 42a q ge gate - emitter charge (turn-on) 47 70 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 145 220 v ge = 15v t d(on) turn-on delay time 67 t r rise time 84 t j = 25c t d(off) turn-off delay time 230 350 i c = 42a, v cc = 800v t f fall time 130 190 v ge = 15v, r g = 5.0 w e on turn-on switching loss 5.68 energy losses include "tail" e off turn-off switching loss 3.23 mj and diode reverse recovery e ts total switching loss 8.90 11.6 see fig. 9,10,18 t sc short circuit withstand time 10 s v cc = 720v, t j = 125c v ge = 15v, r g = 5.0 w t d(on) turn-on delay time 65 t j = 150c, see fig. 11,18 t r rise time 87 i c = 42a, v cc = 800v t d(off) turn-off delay time 370 v ge = 15v, r g = 5.0 w t f fall time 290 energy losses include "tail" e ts total switching loss 13.7 mj and diode reverse recovery l e internal emitter inductance 13 nh measured 5mm from package c ies input capacitance 5770 v ge = 0v c oes output capacitance 400 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 100 ? = 1.0mhz t rr diode reverse recovery time 107 160 ns t j = 25c see fig. 160 240 t j = 125c 14 i f = 42a i rr diode peak reverse recovery current 10 15 a t j = 25c see fig. 1624 t j = 125c 15 v r = 200v q rr diode reverse recovery charge 680 1020 nc t j = 25c see fig. 1400 2100 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery 250 a/s t j = 25c see fig. during t b 320 t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 1200 v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage 1.1 v/c v ge = 0v, i c = 10ma v ce(on) collector-to-emitter saturation voltage 2.97 3.9 i c = 42a v ge = 15v 3.44 v i c = 78a see fig. 2, 5 2.60 i c = 42a, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -12 mv/c v ce = v ge , i c = 1.5ma g fe forward transconductance ? 25 38 s v ce = 50v, i c = 42a i ces zero gate voltage collector current 500 a v ge = 0v, v ce = 1200v 10 ma v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop 2.5 3.7 i c = 42a see fig. 13 2.4 i c = 42a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified) ns ns v
IRG4PSH71KD www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 1.0 2.0 3.0 4.0 5.0 v , collector-to-emitter voltage (v) i , collector current (a) ce c v = 15v 80 s pulse width ge t = 150 c j t = 25 c j 1 10 100 1000 5 6 7 8 9 10 11 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 150 c j t = 25 c j ic , collector-to-emitter current (a) 0.1 1 10 100 0 10 20 30 40 f, frequency (khz) load current (a) 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 9 0 c gate drive as specified sink j power dissipation = w 58
IRG4PSH71KD 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1 t , rectan g ular pulse duration ( sec ) a d = 0.50 0.20 0.10 0.05 0.02 0.01 sin gle pu lse (thermal response) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c thermal response (z thjc ) -60 -40 -20 0 20 40 60 80 100 120 140 160 2.0 3.0 4.0 5.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 84 c i = a 42 c i = a 21 c 25 50 75 100 125 150 0 20 40 60 80 t , case temperature ( c) maximum dc collector current(a) c
IRG4PSH71KD www.irf.com 5 fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage ( w ) 1 10 100 0 2000 4000 6000 8000 10000 v , collector-to-emitter volta g e (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res 0 100 200 300 400 500 0 5 10 15 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 42a cc c 0 10 20 30 40 50 9 10 11 12 13 14 15 r , gate resistance total switching losses (mj) g v = 800v v = 15v t = 25 c i = 42a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = 5.0 v = 15v v = 800v g ge cc i = a 84 c i = a 42 c i = a 21 c (w) w
IRG4PSH71KD 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current instantaneous forward current - i f (a) 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter volta g e (v) i , collector current (a) ce c 20 40 60 80 100 0 10 20 30 40 i , collector current (a) total switching losses (mj) c r = 5.0 t = 150 c v = 800v v = 15v g j cc ge 1 10 100 1000 0.0 2.0 4.0 6.0 fm forward voltage drop - v (v) t = 150c t = 125c t= 25c j j j w
IRG4PSH71KD www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt di (rec) m/dt- (a /s) irr- ( a) trr- (nc) qrr- (nc) 0 100 200 300 100 1000 f di /dt - ( a/ s ) i = 84a i = 42a i = 21a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - ( a/ s ) i = 84a i = 42a i = 21a f f f v = 200v t = 125c t = 25c r j j 0 1000 2000 3000 4000 5000 100 1000 f di /dt - ( a/ s ) i = 84a i = 42a i = 21a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - ( a/ s ) i = 84a i = 42a i = 21a f f f v = 200v t = 125c t = 25c r j j
IRG4PSH71KD 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+ 5 s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt vce ic dt
IRG4PSH71KD www.irf.com 9 vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 800v 4 x i c @25c 0 - 800v figure 18e. macro waveforms for figure 18a's test circuit
IRG4PSH71KD 10 www.irf.com notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 w (figure 19) ? pulse width 80s; duty factor 0.1% ? pulse width 5.0s, single shot case outline and dimensions super-247 dimensions are shown in millimeters world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 5/99
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